IPW60R041P6
- Manufacturer:Infineon
- Product Category:MOSFET
- RoHS:Details
- Technology:Si
- Mounting Style:Through Hole
- Package / Case:TO-247-3
- Number of Channels:1 Channel
- Transistor Polarity:N-Channel
- Vds – Drain-Source Breakdown Voltage:600 V
- Id – Continuous Drain Current:77.5 A
- Rds On – Drain-Source Resistance:37 mOhms
- Vgs – Gate-Source Voltage:20 V
- Vgs th – Gate-Source Threshold Voltage:3.5 V
- Qg – Gate Charge:170 nC
- Minimum Operating Temperature:- 55 C
- Maximum Operating Temperature:+ 150 C
- Pd – Power Dissipation:481 W
- Configuration:Single
- Channel Mode:Enhancement
- Tradename:CoolMOS
- Packaging:Tube
- Height:21.1 mm
- Length:16.13 mm
- Series:CoolMOS P6
- Transistor Type:1 N-Channel
- Width:5.21 mm
- Brand:Infineon Technologies
- Fall Time:5 ns
- Product Type:MOSFET
- Rise Time:27 ns
- Factory Pack Quantity:240
- Subcategory:MOSFETs
- Typical Turn-Off Delay Time:90 ns
- Typical Turn-On Delay Time:29 ns
- Unit Weight:38 g
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